Majid Shalchian's Personal Page

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Majid Shalchian
Assistant Professor
Amir Kabir University Department of Electrical Engineering 424 Hafez Avenue TEHRAN IRAN, 15875-4413
Office:	3377
Phone: Fax: E-Mail:	+98(021) 64543377 +98(021) 66490581 shalchian@aut.ac.ir

Research Interests

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Semiconductor Devices (Hall Effect Sensors, Embedded Flash Memories)

Silicon Nanocrystals

MEMS Sensors (Pressure transducer)

VLSI Circuits

Links

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• AUT Department of Electrical Engineering
• Advanced Automotive Electronics Lab

Interesting Scientific Articles

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Selected Publications

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- Functional nanocrystal-based memories with extraction of nanocrystals properties by charge pumping technique
R Diaz, J Grisolia, B Pecassou, M Shalchian, G BenAssayag
Solid-State Electronics,2013, 82, 11-15

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-Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer
C Dumas, J Grisolia, G BenAssayag, C Bonafos, S Schamm, A Claverie, A Arbouet, M Carrada, V Paillard, M Shalchian., Physica E: Low-dimensional Systems and Nanostructures 2007, 38 (1), 80-84

-Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation
J Grisolia, M Shalchian, G BenAssayag, H Coffin, C Bonafos, S Schamm, SM Atarodi
Materials Science and Engineering: 2005, B 124, 494-498

-The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation
J Grisolia, M Shalchian, GB Assayag, H Coffin, C Bonafos, S Schamm, SM Atarodi
Nanotechnology 2005, 16 (12), 2987

-Electrical properties of nanocontacts on silicon nanoparticles embedded in thin SiO2 synthesized by ultralow energy ion implantation
G Ben Assayag, M Shalchian, H Coffin, A Claverie, J Grisolia, C Dumas, SM Atarodi
Journal of Vacuum Science & Technology B: Microelectronics, 2005, 23 (6) 2821

-From continuous to quantized charging phenomena in few nanocrystals MOS structures
C Bonafos, A Claverie, G Benassayag, M Shalchian, J Grisolia, SM Atarodi
Solid State Phenomena 2005, 108, 25-32

-Evolution of quantum electronic features with the size of silicon nanoparticles embedded in a SiO2 layer obtained by low energy ion implantation
C Bonafos, A Claverie, G BenAssayag, M Shalchian, Jeremie Grisolia, SM Atarodi, H Coffin, C Dumas, Solid State Phenomena 108, 71-76

-From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation
M Shalchian, J Grisolia, G Ben Assayag, H Coffin, SM Atarodi, A Claverie
Solid-state electronics 2005, 49 (7), 1198-1205

-Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor
M Shalchian, J Grisolia, GB Assayag, H Coffin, SM Atarodi, A Claverie
Applied Physics Letters 2005, 86 (16), 163111-163111-3

-Papers from the 49th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication-Particle Beam Technologies-Electrical properties of nanocontacts on silicon
GB Assayag, M Shalchian, H Coffin, A Claverie, J Grisolia, C Dumas, SM Atarodi
Journal of Vacuum Science and Technology-Section B 23 (6), 2821-2824

-INTEGRATION OF A FLASH MEMORY IN THE CONVENTIONAL 0.25 UM CMOS PROCESS USING A SINGLE LAYER OF POLY-SILICON
M SHALCHIAN, SM ATARODI, JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS 2004, 1 (2), 3

-A logic CMOS compatible flash EEPROM for small scale integration
M Shalchian, SM Atarod,i Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference of Microelectronics 2003, Pp. 348-351

- Design and Fabrication of a non Volatile memory cell in standard CMOS process ,, M.Shalchian, S. Mojtaba Atarodi, proceeding of 14th ICEE, 2004.

Courses Info

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• Undergraduate Course - Design of VLSI Systems, Winter-Spring 2012
• Graduate Course - Design of VLSI Circuits, Winter-Spring 2012

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© Majid Shalchian, last updated Sept. 17, 2013